參數(shù)資料
型號: ZTX415
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: NPN SILICON PLANAR AVALANCHE TRANSISTOR
中文描述: 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: TO-92 COMPATIBLE, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 61K
代理商: ZTX415
NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
*
Specifically designed for Avalanche mode operation
*
60A Peak Avalanche Current (Pulse width=20ns)
*
Low inductance package
APPLICATIONS
*
Laser LED drivers
*
Fast edge generation
*
High speed pulse generators
*
Suitable for single, series and parallel operation
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
260
V
Collector-Emitter Voltage
100
V
Emitter-Base Voltage
6
V
Continuous Collector Current
500
mA
Peak Collector Current (Pulse Width=20ns)
60
A
Power Dissipation
680
mW
Operating and Storage Temperature Range
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CES
260
V
I
C
=1mA
T
amb
= -55 to +175°C
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
100
V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6
V
I
E
=10
μ
A
Collector Cut-Off
Current
I
CBO
0.1
10
μ
A
μ
A
μ
A
V
CB
=180V
V
CB
=180V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
0.1
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=10mA, I
B
=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=10mA, I
B
=1mA*
Current in Second
Breakdown (Pulsed)
I
SB
15
25
A
A
V
C
=200V, C
CE
=620pF
V
C
=250V, C
CE
=620pF
I
C
=10mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
25
Transition Frequency
f
T
40
MHz
I
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Capacitance
C
cb
8
pF
V
=20V, I
E
=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
E-Line
TO92 Compatible
ZTX415
3-171
C
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