參數(shù)資料
型號： ZX3CD3S1M832
文件頁數(shù)： 6/9頁
文件大?。?/td> 344K
代理商： ZX3CD3S1M832
ZX3CDBS1M832
ISSUE 1 - JUNE 2002
6
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
V
(BR)CBO
40
100
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
20
27
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
7.5
8.2
V
I
E
=100 A
V
CB
=32V
V
EB
=6V
V
CES
=16V
I
C
=0.1A, I
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
I
C
=4.5A, I
B
=125mA*
I
C
=4.5A, I
B
=125mA*
I
C
=4.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
=50mA, V
CE
=10V
f=100MHz
Collector Cut-Off Current
25
nA
Emitter Cut-Off Current
25
nA
Collector Emitter Cut-Off Current
25
nA
Collector-Emitter Saturation
Voltage
8
90
115
190
210
15
150
135
250
270
mV
mV
mV
mV
mV
Base-Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
0.98
-1.05
V
Base-Emitter Turn-On Voltage
0.88
-0.95
V
Static Forward Current Transfer
Ratio
200
300
200
100
400
450
360
180
Transition Frequency
f
T
100
140
MHz
Output Capacitance
C
obo
t
(on)
t
(off)
23
30
pF
V
CB
=10V, f=1MHz
V
CC
=10V, I
=3A
I
B1
=I
B2
=10mA
Turn-On Time
170
ns
Turn-Off Time
400
ns
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)R
V
F
40
60
V
I
R
=300 A
I
F
=50mA*
I
F
=100mA*
I
F
=250mA*
I
F
=500mA*
I
F
=750mA*
I
F
=1000mA*
I
F
=1500mA*
I
F
=1000mA,T
a
=100°C*
V
R
=30V
f=1MHz,V
R
=25V
switched from
I
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
Forward Voltage
240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
—
mV
mV
mV
mV
mV
mV
mV
mV
Reverse Current
I
R
C
D
t
rr
50
100
A
Diode Capacitance
25
pF
Reverse Recovery
Time
12
ns
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
*Measured under pulsed conditions.
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ZX3CD3S1M832TA 功能描述:兩極晶體管 - BJT PNP 40V/1A Sch Comb RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZX3CD3S1M832TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:MPPS⑩ Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL
ZX3CDBS1M832 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
ZX3CDBS1M832TA 功能描述:兩極晶體管 - BJT PNP 20V/1A Sch Comb RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZX3CDBS1M832TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC
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