參數(shù)資料
型號(hào): ZX3CDBS1M832TC
英文描述: TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC
中文描述: 晶體管|晶體管|叩| 20V的五(巴西)總裁| 4.5AI(丙)| LLCC
文件頁(yè)數(shù): 1/9頁(yè)
文件大小: 344K
代理商: ZX3CDBS1M832TC
SUMMARY
NPN Transistor
V
CEO
= 20V; R
SAT
= 47m ;
C
= 4.5A
V
R
= 40V; V
F
= 500mV (@1A); I
C
=1A
Schottky Diode
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP this combination dual
comprises an ultra low saturation PNP transistor and a 1A Schottky barrier
diode. This excellent combination provides users with highly efficient
performance in applications including DC-DC and charging circuits.
Users will also gain several other
key benefits
:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
FEATURES
Extremely Low Saturation Voltage
(150mV @1A)
H
FE
characterised up to 6A
I
C
= 4.5A Continuous Collector Current
Extremely Low V
F
, fast switching Schottky
3mm x 2mm MLP
APPLICATIONS
DC - DC Converters
Mobile Phones
Charging Circuits
Motor control
DEVICE MARKING
BS1
ZX3CDBS1M832
ISSUE 1 - JUNE 2002
MPPS Miniature Package Power Solutions
20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY
DIODE COMBINATION DUAL
1
Cathode
Anode
B
C
E
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZX3CDBS1M832TA
7
8mm
3000
ZX3CDBS1M832TC
13
8mm
10000
ORDERING INFORMATION
3mm x 2mm Dual Die MLP
3mm x 2mm Dual MLP
underside view
PINOUT
相關(guān)PDF資料
PDF描述
ZX3CD3S1M832
ZX3CD3S1M832TA TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | LLCC
ZX3CD3S1M832TC TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | LLCC
ZX3CDBS1M832
ZX54AHCT369J Logic IC
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