參數(shù)資料
型號(hào)： ZX5T951GTA
廠商： ZETEX PLC
元件分類： 功率晶體管
英文描述： 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
中文描述： 5.5 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝： SOT-223, 4 PIN
文件頁(yè)數(shù)： 4/6頁(yè)
文件大?。?/td> 123K
代理商： ZX5T951GTA
ZX5T951G
S E M IC O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
-100
-120
V
I
C
=-100 A
I
C
=-1 A, RB
I
C
=-10mA*
I
E
=-100 A
V
CB
=-80V
V
CB
=-80V,T
amb
=100 C
V
CB
=-80V
V
CB
=-80V,T
amb
=100 C
V
EB
=-6V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5A, I
B
=-500mA*
I
C
=-5A, I
B
=-500mA*
I
C
=-5A, V
CE
=-1V*
I
C
=-10mA, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Collector-emitter breakdown voltage
-100
-120
V
1k
Collector-emitter breakdown voltage
-60
-80
V
Emitter-base breakdown voltage
-7
-8.1
V
Collector cut-off current
1
-20
-0.5
nA
A
Collector cut-off current
I
CER
R
1k
1
-20
-0.5
nA
A
Emitter cut-off current
I
EBO
V
CE(S AT)
1
-10
nA
Collector-emitter saturation voltage
-15
-55
-90
-195
-25
-70
-120
-250
mV
mV
mV
mV
Base-emitter saturation voltage
V
BE(S AT)
V
BE(ON)
H
FE
-1030
-1150
mV
Base-emitter turn-on voltage
-920
-1020
mV
Static forward current transfer ratio
100
100
45
10
250
200
90
25
300
Transition frequency
f
T
120
Output capacitance
C
OBO
t
ON
t
OFF
48
pF
V
CB
=-10V, f=1MHz*
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
Switching times
39
370
ns
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZX5T951GTC 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
ZX5T951Z 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
ZX5T951ZTA 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
ZX5T953G 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN
ZX5T953GTA 功能描述:兩極晶體管 - BJT PNP 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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