參數(shù)資料
型號： ZXMN10A08E6TC
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 100V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 6 PIN
文件頁數(shù)： 4/7頁
文件大?。?/td> 1036K
代理商： ZXMN10A08E6TC
ZXMN10A08E6
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
100
V
ID=250 A, VGS=0V
VDS=100V, VGS=0V
VGS=
20V, VDS=0V
ID=250 A, VDS= VGS
VGS=10V, ID=3.2A
VGS=6V, ID=2.6A
VDS=15V,ID=3.2A
Zero Gate Voltage Drain Current
0.5
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
2.0
V
Static Drain-Source On-State Resistance
(1)
0.40
0.60
Forward Transconductance (1)(3)
gfs
5.0
S
DYNAMIC
(3)
Input Capacitance
Ciss
Coss
Crss
405
pF
VDS=50 V, VGS=0V,
f=1MHz
Output Capacitance
28.2
pF
Reverse Transfer Capacitance
14.2
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
tr
td(off)
tf
Qg
3.4
ns
VDD=30V, ID=1.2A
RG=6.0 , VGS=10V
Rise Time
2.2
ns
Turn-Off Delay Time
8
ns
Fall Time
3.2
ns
Gate Charge
4.2
nC
VDS=50V,VGS=5V,
I
D
=1.2A
Total Gate Charge
Qg
Qgs
Qgd
7.7
nC
VDS=50V,VGS=10V,
I
D
=1.2A
Gate-Source Charge
1.8
nC
Gate-Drain Charge
2.1
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.87
0.95
V
TJ=25°C, IS=3.2A,
VGS=0V
TJ=25°C, IF=1.2A,
di/dt= 100A/ s
Reverse Recovery Time (3)
trr
Qrr
27
ns
Reverse Recovery Charge (3)
32
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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參數(shù)描述
ZXMN10A08G 功能描述:MOSFET N-CHAN 100V SOT223 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
ZXMN10A08GTA 功能描述:MOSFET 100V N-Channel 2A MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN10A09K 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10A09KTC 功能描述:MOSFET MOSFET N-CH 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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