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參數(shù)資料
| 型號： | ZXMN2A04DN8TC |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | ZXMN2A04DN8TC |
PROVISIONAL ISSUE A - AUGUST 2001
ZXMN2A04DN8
3
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX .
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
20
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
0.5
μ
A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
0.7
V
I
D
=250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance (1)
R
DS (on)
0.030
0.045
V
GS
=4.5V, I
D
=11A
V
GS
=2.5V, I
D
=5A
Forward Transconductance (3)
g
fs
40
S
V
DS
=10V,I
D
=6A
DYNAMIC
(3)
Input Capacitance
C
iss
2300
pF
V
=15V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
450
pF
Reverse Transfer Capacitance
C
rss
260
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
6.3
ns
V
DD
=10V, I
D
=6A
R
G
=6.0
, V
GS
=5V
Rise Time
t
r
8.5
ns
Turn-Off Delay Time
t
d(off)
25
ns
Fall Time
t
f
5
ns
Gate Charge
Q
g
19.4
nC
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge
Q
g
24
nC
V
DS
=10V,V
GS
=4.5V,
I
D
=6A
Gate-Source Charge
Q
gs
5
nC
Gate-Drain Charge
Q
gd
4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
TBA
0.95
V
T
J
=25°C, I
S
=5.1A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
15
ns
T
=25°C, I
=6A,
di/dt= 100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
5
nC
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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