參數(shù)資料
型號(hào)： ZXMN3A14FTA
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： 30V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 3 PIN
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 209K
代理商： ZXMN3A14FTA
ZXMN3A14F
S E M IC O N D U C T O R S
PROVISIONAL ISSUE B - SEPTEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
30
V
I
D
= 250 A, V
GS
=0V
V
DS
= 30V, V
GS
=0V
V
GS
=
12V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 3.2A
V
GS
= 4.5V, I
D
= 2.6A
V
DS
= 15V, I
D
= 3.2A
Zero Gate Voltage Drain Current
1
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
1.0
V
Static Drain-Source On-State
Resistance
0.048
0.069
0.065
0.095
Forward Transconductance
DYNAMIC
(3)
(1) (3)
g
fs
7.1
S
Input Capacitance
C
iss
C
oss
C
rss
448
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Output Capacitance
82
pF
Reverse Transfer Capacitance
SWITCHING
(2) (3)
49
pF
Turn-On-Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.4
ns
V
DD
= 15V, V
GS
= 10V
I
D
= 1A
R
G
6.0
Rise Time
2.5
ns
Turn-Off Delay Time
13.1
ns
Fall Time
5.3
ns
Total Gate Charge
8.6
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 3.2A
Gate-Source Charge
1.4
nC
Gate Drain Charge
1.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
0.85
0.95
V
T
j
=25°C, I
S
= (2.5)A,
V
GS
=0V
T
j
=25°C, I
F
= (1.6)A,
di/dt=100A/ s
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
t
rr
Q
rr
13
ns
7
NC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1)
Measured under pulsed conditions. Pulse widt
h
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300 s; duty cycle
2%
.
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