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| 型號： | ZXMN3AM832(1) |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 1107K |
| 代理商： | ZXMN3AM832(1) |
ZXMN3A01F
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
0.5
μ
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1
V
I
D
=250
μ
A, V
DS
= V
GS
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2.0A
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.106
0.12
0.18
Forward Transconductance (1)(3)
g
fs
3.5
S
V
DS
=4.5V,I
D
=2.5A
DYNAMIC
(3)
Input Capacitance
C
iss
190
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
38
pF
Reverse Transfer Capacitance
C
rss
20
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.7
ns
V
DD
=15V, I
D
=2.5A
R
G
=6.0
, V
GS
=10V
Rise Time
t
r
2.3
ns
Turn-Off Delay Time
t
d(off)
6.6.
ns
Fall Time
t
f
2.9
ns
Gate Charge
Q
g
2.3
nC
V
DS
=15V,V
GS
=5V,
I
D
=2.5A
Total Gate Charge
Q
g
3.9
nC
V
DS
=15V,V
GS
=10V,
I
D
=2.5A
Gate-Source Charge
Q
gs
0.6
nC
Gate-Drain Charge
Q
gd
0.9
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.85
0.95
V
T
J
=25°C, I
S
=1.7A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
17.7
ns
T
J
=25°C, I
F
=2.5A,
di/dt= 100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
13.0
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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| ZXMN3AM832TA | 功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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