參數(shù)資料
型號(hào)： ZXMN6A08E6TA
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： 60V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 2800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 6 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 850K
代理商： ZXMN6A08E6TA
ZXMN6A08E6
ISSUE 1 - MARCH 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
113
°C/W
Junction to Ambient (b)
R
θ
JA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
VGS
ID
60
V
Gate Source Voltage
20
V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
3.0
2.4
2.4
A
Pulsed Drain Current (c)
IDM
IS
ISM
PD
4.0
A
Continuous Source Current (Body Diode) (b)
2.6
A
Pulsed Source Current (Body Diode) (c)
6.4
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
1.1
8.8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.
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