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參數資料
| 型號： | ZXMN6A09DN8TC |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 3900 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 694K |
| 代理商： | ZXMN6A09DN8TC |
PROVISIONAL ISSUE D - AUGUST 2001
ZXMN6A09DN8
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
V
GS
I
D
60
V
Gate Source Voltage
20
V
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)(d)
(V
GS
=10V; T
A
=70°C)(b)(d)
(V
GS
=10V; T
A
=25°C)(a)(d)
5.2
4.1
3.9
A
Pulsed Drain Current (c)
I
DM
I
S
I
SM
P
D
17.6
A
Continuous Source Current (Body Diode) (b)
3.5
A
Pulsed Source Current (Body Diode)(c)
15
A
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
1.25
10
W
mW/°C
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
P
D
1.81
14.5
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
2.16
17.3
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
θ
JA
100
°C/W
Junction to Ambient (a)(e)
R
θ
JA
69
°C/W
Junction to Ambient (b)(d)
R
θ
JA
58
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse width limited by maximum
junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.
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| ZXMN6A09G | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN6A09GTA | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN6A09GTC | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ZXMN6A09DN8TCA | 功能描述:MOSFET 60V N-CHAN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN6A09G | 制造商:Diodes Incorporated 功能描述: |
| ZXMN6A09G(1) | 制造商:ZETEX 制造商全稱:ZETEX 功能描述: |
| ZXMN6A09G_07 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V SOT223 N-channel enhancement mode MOSFET |
| ZXMN6A09GTA | 功能描述:MOSFET N-Ch 60V 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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