參數(shù)資料
型號(hào)： ZXMN6A09GTC
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： 60V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： LOW PROFILE SOIC-4
文件頁(yè)數(shù)： 4/7頁(yè)
文件大小： 195K
代理商： ZXMN6A09GTC
ZXMN6A09G
S E M IC O N D U C T O R S
PROVISIONAL ISSUE D - SEPTEMBER 2003
4
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX .
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
60
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
1
μ
A
V
DS
=60V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
1.0
V
I
D
=250
μ
A, V
DS
= V
GS
V
GS
=10V, I
D
=8.2A
V
GS
=4.5V, I
D
=7.4A
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.045
0.070
Forward Transconductance (3)
g
fs
15
S
V
DS
=15V,I
D
=8.2A
DYNAMIC
(3)
Input Capacitance
C
iss
1407
pF
V
=40 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
121
pF
Reverse Transfer Capacitance
C
rss
59
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.9
ns
V
DD
=15V, I
D
=3.5A
R
6.0
, V
GS
=10V
(refer to test
circuit)
Rise Time
t
r
5.0
ns
Turn-Off Delay Time
t
d(off)
25.3
ns
Fall Time
t
f
4.6
ns
Gate Charge
Q
g
12.4
nC
V
DS
=15V,V
GS
=5V,
I
D
Total Gate Charge
Q
g
24.2
nC
V
DS
=15V,V
GS
=10V,
I
D
Gate-Source Charge
Q
gs
5.2
nC
Gate-Drain Charge
Q
gd
3.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
0.85
0.95
V
T
J
=25°C, I
S
=6.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
26.3
ns
T
=25°C, I
=3.5A,
di/dt= 100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
26.6
nC
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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