- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄382781 > ZXMP3A17DN8(1) PDF資料下載
參數(shù)資料
| 型號(hào)： | ZXMP3A17DN8(1) |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | ZXMP3A17DN8(1) |
ZXMP3A13F
PROVISIONAL ISSUE B - J ULY 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
-30
V
I
D
=-250 A, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
=
20V, V
DS
=0V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-1.4A
V
GS
=-4.5V, I
D
=-1.1A
V
DS
=-15V,I
D
=-1.4A
Zero Gate Voltage Drain Current
-0.5
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
-1.0
V
Static Drain-Source On-State Resistance
(1)
0.210
0.330
Forward Transconductance (1)(3)
g
fs
2.48
S
DYNAMIC
(3)
Input Capacitance
C
iss
C
oss
C
rss
204
pF
V
=-15V, V
GS
=0V,
f=1MHz
Output Capacitance
39.8
pF
Reverse Transfer Capacitance
25.8
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
1.15
ns
V
DD
=-15V, I
D
=-1A
R
G
=6.0 , V
GS
=-10V
Rise Time
2.29
ns
Turn-Off Delay Time
12.1
ns
Fall Time
7.48
ns
Gate Charge
2.58
nC
V
DS
=-15V,V
GS
=-5V,
I
D
=-1.4A
Total Gate Charge
Q
g
Q
gs
Q
gd
5.15
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-1.4A
Gate-Source Charge
0.65
nC
Gate-Drain Charge
0.92
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
-0.85
-0.95
V
T
J
=25°C, I
S
=-1.1A,
V
GS
=0V
T
=25°C, I
=-0.95A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
t
rr
Q
rr
18.6
ns
Reverse Recovery Charge (3)
14.8
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZXMP3A17E6(1) | |
| ZXRE1004EFTA | IC-SM 1.22V PRECISION REFERENCE |
| ZXRE1004(1) | |
| ZXRE1004CFTA | IC-SM 1.22V PRECISION REFERENCE |
| ZXRE1004DFTA | IC-SM 1.22V PRECISION REFERENCE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMP3A17DN8TA | 功能描述:MOSFET Dl 30V P-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMP3A17DN8TC | 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET |
| ZXMP3A17E6 | 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP3A17E6(1) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| ZXMP3A17E6TA | 功能描述:MOSFET 30V P-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。