參數(shù)資料
型號： ZXMP3A17E6(1)
文件頁數(shù)： 2/7頁
文件大?。?/td> 184K
代理商： ZXMP3A17E6(1)
ZXMP3A13F
PROVISIONAL ISSUE B - J ULY 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient (a)
R
θ
J A
200
°C/W
J unction to Ambient (b)
R
θ
J A
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
-30
V
Gate Source Voltage
20
V
Continuous Drain Current V
GS
=10V; T
A
=25°C (b)
V
GS
=10V; T
A
=70°C (b)
V
GS
=10V; T
A
=25°C (a)
-1.6
-1.3
-1.4
A
Pulsed Drain Current (c)
I
DM
I
S
I
S M
P
D
-6
A
Continuous Source Current (Body Diode) (b)
-1.2
A
Pulsed Source Current (Body Diode) (c)
-6
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
625
5
mW
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.
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相關代理商/技術參數(shù)
參數(shù)描述
ZXMP3A17E6TA 功能描述:MOSFET 30V P-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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