參數(shù)資料
型號: ZXMP3A17E6
廠商: Zetex Semiconductor
英文描述: 30V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述: 30V的P溝道增強(qiáng)型MOS管
文件頁數(shù): 4/7頁
文件大小: 196K
代理商: ZXMP3A17E6
ZXMP3A17E6
PROVISIONAL ISSUE C - AUGUST 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
-30
V
I
D
=-250 A, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
=
20V, V
DS
=0V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-3.2A
V
GS
=-4.5V, I
D
=-2.5A
V
DS
=-15V,I
D
=-3.2A
Zero Gate Voltage Drain Current
-0.5
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
-0.8
V
Static Drain-Source On-State Resistance
(1)
0.070
0.110
Forward Transconductance (1)(3)
g
fs
6.4
S
DYNAMIC
(3)
Input Capacitance
C
iss
C
oss
C
rss
630
pF
V
=-15V, V
GS
=0V,
f=1MHz
Output Capacitance
113
pF
Reverse Transfer Capacitance
78
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
1.74
ns
V
DD
=-15V, I
D
=-1A
R
G
=6.0 , V
GS
=-10V
Rise Time
2.87
ns
Turn-Off Delay Time
29.2
ns
Fall Time
8.72
ns
Gate Charge
8.28
nC
V
DS
=-15V,V
GS
=-5V,
I
D
Total Gate Charge
Q
g
Q
gs
Q
gd
15.8
nC
V
DS
=-15V,V
GS
=-10V,
I
D
Gate-Source Charge
1.84
nC
Gate-Drain Charge
2.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.85
-1.2
V
T
J
=25°C, I
S
=-2.5A,
V
GS
=0V
T
=25°C, I
=-1.7A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
t
rr
Q
rr
19.5
ns
Reverse Recovery Charge (3)
16.3
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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