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參數(shù)資料
| 型號： | ZXMP6A13FTA |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Connectors, Accessories; For Use With:Multi-Con-X Connectors; Accessory Type:Dust Cap RoHS Compliant: Yes |
| 中文描述： | 60V的P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 212K |
| 代理商： | ZXMP6A13FTA |
ZXMP6A13F
ISSUE 2 - J ULY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
-60
V
I
D
=-250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
-1
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-0.9A
V
GS
=-4.5V, I
D
=-0.8A
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.400
0.600
Forward Transconductance
(1)(3)
g
fs
1.8
S
V
DS
=-15V,I
D
=-0.9A
DYNAMIC
(3)
Input Capacitance
C
iss
233
pF
V
=-30V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
17.4
pF
Reverse Transfer Capacitance
C
rss
9.6
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.6
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0 , V
GS
=-10V
Rise Time
t
r
2.3
ns
Turn-Off Delay Time
t
d(off)
13
ns
Fall Time
t
f
5.8
ns
Gate Charge
Q
g
2.4
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-0.9A
Total Gate Charge
Q
g
5.1
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-0.9A
Gate-Source Charge
Q
gs
0.7
nC
Gate-Drain Charge
Q
gd
0.7
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
-0.85
-0.95
V
T
J
=25°C, I
S
=-0.8A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
22.6
ns
T
=25°C, I
=-0.9A,
di/dt= 100A/
μ
s
Reverse Recovery Charge
(3)
Q
rr
23.2
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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