參數(shù)資料
型號(hào): ZXMP6A17GTA
廠商: ZETEX PLC
元件分類: JFETs
英文描述: 60V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述: 3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SOT-223, 4 PIN
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 155K
代理商: ZXMP6A17GTA
ZXMP6A17G
S E M IC O N D U C T O R S
2
ISSUE 1 - MAY 2005
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
-60
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
= -10V; T
A
=25°C)
(b)
(V
GS
= -10V; T
A
=70°C)
(b)
(V
GS
= -10V; T
A
=25°C)
(a)
I
D
-4.1
-3.3
-3.0
A
Pulsed Drain Current
(c)
I
DM
-13.7
A
Continuous Source Current (Body Diode)
(b)
I
S
-4.8
A
Pulsed Source Current (Body Diode)
(c)
I
S M
-13.7
A
Power Dissipation at T
A
=25°C
(a)
Linear Derating Factor
P
D
2.0
16
W
mW/°C
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
P
D
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
V ALUE
UNIT
J unction to Ambient
(a)
R
θ
J A
62.5
°C/W
J unction to Ambient
(b)
R
θ
J A
32.2
°C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
相關(guān)PDF資料
PDF描述
ZXMP6A17GTC 60V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
ZXMP6A18DN8TA DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
ZXMP6A18DN8TC DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
ZXMP6A18 60V P-channel enhancement mode MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMP6A17GTA-CUT TAPE 制造商:DIODES 功能描述:ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
ZXMP6A17GTC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP6A17K 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP6A17KTC 功能描述:MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMP6A17N8 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET