參數(shù)資料
型號(hào)： ZXMP6A17GTC
廠(chǎng)商： ZETEX PLC
元件分類(lèi)： JFETs
英文描述： 60V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： SOT-223, 4 PIN
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 155K
代理商： ZXMP6A17GTC
ZXMP6A17G
S E M IC O N D U C T O R S
ISSUE 1 - MAY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
-60
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
-1
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-2.2A
V
GS
=-4.5V, I
D
=-1.8A
Static Drain-Source On-State
Resistance
R
DS (on)
0.125
0.190
Forward Transconductance
(1)(3)
g
fs
4.7
S
V
DS
=-15V,I
D
=-2.2A
DYNAMIC
(3)
Input Capacitance
C
iss
637
pF
V
=-30V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
70
pF
Reverse Transfer Capacitance
C
rss
53
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
2.6
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0
,
V
GS
=-10V
Rise Time
t
r
3.4
ns
Turn-Off Delay Time
t
d(off)
26.2
ns
Fall Time
t
f
11.3
ns
Gate Charge
Q
g
9.8
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-2.2A
Total Gate Charge
Q
g
17.7
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-2.2A
Gate-Source Charge
Q
gs
1.6
nC
Gate-Drain Charge
Q
gd
4.4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
-0.85
-0.95
V
T
J
=25 C, I
S
=-2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
25.1
ns
T
=25 C, I
=-1.7A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Q
rr
27.2
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300μ s. Duty cycle
2% .
相關(guān)PDF資料
PDF描述
ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
ZXMP6A18DN8TA DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
ZXMP6A18DN8TC DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
ZXMP6A18 60V P-channel enhancement mode MOSFET
ZXMP6A18K 60V P-channel enhancement mode MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMP6A17K 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP6A17KTC 功能描述:MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMP6A17N8 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP6A17N8TC 功能描述:MOSFET MOSFET,P-CHANNEL 60V, -3.4A/-2.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMP6A18 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:60V P-channel enhancement mode MOSFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*