參數(shù)資料
型號(hào)： ZXMP6A18
廠商： Zetex Semiconductor
英文描述： 60V P-channel enhancement mode MOSFET
中文描述： 60V的P溝道增強(qiáng)型MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 580K
代理商： ZXMP6A18
ZXMP6A18K
Issue 1 - March 2006
Zetex Semiconductors plc 2006
2
www.zetex.com
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b)For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
DSS
-60
V
Gate-source voltage
V
GS
±20
V
Continuous drain current
I
D
@V
GS
=10V; T
A
=25°C
(b)
-10.4
A
@V
GS
=10V; T
A
=70°C
(b)
-8.3
A
@V
GS
=10V; T
A
=25°C
(a)
-6.8
A
Pulsed drain current
(c)
I
DM
-37.5
A
Continuous source current (body diode)
(b)
I
S
-11.5
A
Pulsed source current (body diode)
(c)
I
SM
-37.5
A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
4.3
34.4
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
10.1
80.8
W
mW/°C
Power dissipation at T
A
=25°C
(d)
Linear derating factor
P
D
2.15
17.2
W
mW/°C
Operating and storage temperature range
T
j
:T
stg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient
(a)
R
JA
29
°C/W
Junction to ambient
(b)
R
JA
12.3
°C/W
Junction to ambient
(d)
R
JA
58
°C/W
相關(guān)PDF資料
PDF描述
ZXMP6A18K 60V P-channel enhancement mode MOSFET
ZXMP6A18KTC 60V P-channel enhancement mode MOSFET
ZXMP7A17G 70V P-channel enhancement mode MOSFET
ZXMP7A17GTA 70V P-channel enhancement mode MOSFET
ZXMP7A17GTC 70V P-channel enhancement mode MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMP6A18DN8 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
ZXMP6A18DN8TA 功能描述:MOSFET Dl 60V P-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMP6A18DN8TC 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
ZXMP6A18K 制造商:Diodes Incorporated 功能描述:MOSFET P D-PAK 制造商:Diodes Incorporated 功能描述:MOSFET, P, D-PAK 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, 60V, -10.4A, DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-10.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
ZXMP6A18KTC 功能描述:MOSFET 60V P-Channel 6.8A MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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