參數(shù)資料
型號： ZXMP6A18DN8TC
廠商： ZETEX PLC
元件分類： JFETs
英文描述： DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
中文描述： 3.7 A, 60 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝： SOIC-8
文件頁數(shù)： 4/7頁
文件大小： 180K
代理商： ZXMP6A18DN8TC
ZXMP6A18DN8
ISSUE 1 - MAY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
-60
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
-1.0
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
-1.0
V
I
D
=-250 A,
V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.055
0.080
V
GS
=-10V, I
D
=-3.5A
V
GS
=-4.5V, I
D
=-2.9A
Forward Transconductance
(1)(3)
g
fs
8.7
S
V
DS
=-15V,I
D
=-3.5A
DYNAMIC
(3)
Input Capacitance
C
iss
1580
pF
V
=-30 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
160
pF
Reverse Transfer Capacitance
C
rss
140
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.6
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0 , V
GS
=-10V
Rise Time
t
r
5.8
ns
Turn-Off Delay Time
t
d(off)
55
ns
Fall Time
t
f
23
ns
Gate Charge
Q
g
23
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-3.5A
Total Gate Charge
Q
g
44
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-3.5A
Gate-Source Charge
Q
gs
3.9
nC
Gate-Drain Charge
Q
gd
9.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
-0.85
-0.95
V
T
J
=25°C, I
S
=-4.2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
37
ns
T
=25°C, I
=-2.1A,
di/dt= 100A/
μ
s
Reverse Recovery Charge
(3)
Q
rr
56
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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