參數(shù)資料
型號： ZXMP7A17GTA
廠商： ZETEX PLC
元件分類： JFETs
英文描述： 70V P-channel enhancement mode MOSFET
中文描述： 3.7 A, 70 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
封裝： SOT-223, 4-PIN
文件頁數(shù)： 4/8頁
文件大?。?/td> 425K
代理商： ZXMP7A17GTA
ZXMP7A17G
Issue 1 - March 2006
Zetex Semiconductors plc 2006
4
www.zetex.com
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain
current
Gate-body leakage
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
(BR)DSS
-70
V
I
D
= -250 A, V
GS
=0V
I
DSS
-1
A
V
DS
= -70V, V
GS
=0V
I
GSS
100
nA
V
GS
=±20V, V
DS
=0V
I
D
= -250 A, V
DS
=V
GS
V
GS
= -10V, I
D
= -2.1A
V
GS
= -4.5V, I
D
= -1.7A
V
DS
= -15V, I
D
= -2.1A
Gate-source threshold voltage V
GS(th)
Static drain-source on-state
resistance
(*)
-1.0
V
NOTES:
(*) Measured under pulsed conditions. Pulse width
() Switching characteristics are independent of operating junction temperature.
() For design aid only, not subject to production testing.
300 s; duty cycle
2%.
R
DS(on)
0.16
0.25
Forward transconductance
(*)()
g
fs
Dynamic
()
Input capacitance
4.4
S
C
iss
C
oss
C
rss
635
pF
V
DS
= -40V, V
GS
=0V
f=1MHz
Output capacitance
52
pF
Reverse transfer capacitance
42.5
pF
Switching
() ()
Turn-on-delay time
t
d(on)
t
r
t
d(off)
t
f
Q
g
2.5
ns
V
DD
= -35V, I
D
= -1A
R
G
6.0 , V
GS
= -10V
Rise time
3.4
ns
Turn-off delay time
27.9
ns
Fall time
8
ns
Total gate charge
9.6
nC
V
DS
= -35V, V
GS
= -5V
I
D
= -2.1A
Total gate charge
Q
g
Q
gs
Q
gd
18
nC
V
DS
= -35V, V
GS
= -10V
I
D
= -2.1A
Gate-source charge
1.77
nC
Gate drain charge
3.66
nC
Source-drain diode
Diode forward voltage
(*)
V
SD
-0.85
-0.95
V
T
j
=25°C, I
S
= -2.0A,
V
GS
=0V
T
j
=25°C, I
S
= -2.1A,
di/dt=100A/ s
Reverse recovery time
()
Reverse recovery charge
()
t
rr
Q
rr
29.8
ns
38.5
nC
相關(guān)PDF資料
PDF描述
ZXMP7A17GTC 70V P-channel enhancement mode MOSFET
ZXMP7A17K 70V P-channel enhancement mode MOSFET
ZXMP7A17KTC 70V P-channel enhancement mode MOSFET
ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET⑩ MOSFET with status indication
ZXMS6002GTA 60V N-Channel self protected enhancement mode IntelliFET⑩ MOSFET with status indication
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMP7A17GTC 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:70V P-channel enhancement mode MOSFET
ZXMP7A17K 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:70V P-channel enhancement mode MOSFET
ZXMP7A17KTC 功能描述:MOSFET 70V P-Channel 5.7A MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMS6001 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V N-channel self protected enhancement mode INTELLIFETTM MOSFET
ZXMS6001N3 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V N-channel self protected enhancement mode INTELLIFETTM MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*