參數(shù)資料
型號: ZXTBM322TC
英文描述: TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC
中文描述: 晶體管|晶體管|叩| 20V的五(巴西)總裁| 4.5AI(丙)| LLCC
文件頁數(shù): 1/6頁
文件大小: 170K
代理商: ZXTBM322TC
SUMMARY
V
CEO
= 20V; R
SAT
= 47m ; I
C
= 4.5A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4
th
generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other
key benefits
:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
Lower package height (nom 0.9mm)
PCB area and device placement savings
Reduced component count
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage
(150mV @1A)
h
FE
specified up to 6A
I
C
= 4.5A Continuous Collector Current
APPLICATIONS
DC - DC Converters (FET Drivers)
2mm x 2mm MLP
Power switches
Motor control
LED backlighting
DEVICE MARKING
SB
ZXTBM322
ISSUE 2 - JUNE 2002
1
MPPS Miniature Package Power Solutions
20V NPN LOW SATURATION TRANSISTOR
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTBM322TA
7
’‘
8mm
3000 units
ZXTBM322TC
13
’‘
8mm
10000 units
ORDERING INFORMATION
2mm x 2mm Single MLP
underside view
PINOUT
2mm x 2mm MLP
(single die)
B
C
E
相關(guān)PDF資料
PDF描述
ZXTBM322
ZXTBM322TA TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC
ZXTCM322
ZXTCM322TA TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 4A I(C) | LLCC
ZXTCM322TC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 4A I(C) | LLCC
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