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參數(shù)資料
| 型號： | ZXTD3M832 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 135K |
| 代理商： | ZXTD3M832 |
ZXTD3M832
S E M IC O N D U C T O R S
ISSUE 1 - J UNE 2003
2
PARAMETER
J unction to Ambient
(a)(f)
J unction to Ambient
(b)(f)
J unction to Ambient
(b)(f)
J unction to Ambient
(d)(f)
J unction to Ambient
(d)(g)
J unction to Ambient
(e)(g)
SYMBOL
VALUE
UNIT
R
J A
83.3
C/W
R
J A
51
C/W
R
J A
125
C/W
R
J A
111
C/W
R
J A
73.5
C/W
R
J A
41.7
C/W
NOTES
(a) For a dual device surface mounted on
8
sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t 5 secs for a dual device surface mounted on
8
sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all
exposed pads attached
. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual
device.
(c) For a dual device surface mounted on
8
sq cm single sided 2oz copper FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions
with all exposed pads attached
.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions
with all exposed pads attached
.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight,
1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=500mW
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
-50
V
Collector-Emitter Voltage
-40
V
Emitter-Base Voltage
-7.5
V
Peak Pulse Current
Continuous Collector Current
(a) (f)
-4
A
-3
A
Base Current
Power Dissipation at TA=25°C
(a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C
(e)(g)
Linear Derating Factor
-1000
mA
1.5
12
W
mW/ C
P
D
2.45
19.6
W
mW/ C
P
D
1
8
W
mW/ C
P
D
1.13
9
W
mW/ C
P
D
1.7
13.6
W
mW/ C
P
D
3
24
W
mW/ C
Operating & Storage Temperature Range
T
j
:T
stg
T
j
-55 to +150
C
J unction Temperature
150
C
ABSOLUTE MAXIMUM RATINGS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZXTDBM832 | |
| ZXTDBM832TA | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC |
| ZXTDBM832TC | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC |
| ZXTDCM832TC | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 4A I(C) | LLCC |
| ZXTDCM832 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXTD3M832TA | 功能描述:TRANS PNP DUAL 40V 3A 8-MLP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| ZXTD3M832TC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR |
| ZXTD4591AM832 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR |
| ZXTD4591AM832TA | 功能描述:兩極晶體管 - BJT 40V PNP 3x2 MLP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZXTD4591AM832TC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR |
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