- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373852 > ZXTN25020DFL (Zetex Semiconductor) 20V, SOT23, NPN low power transistor PDF資料下載
參數(shù)資料
| 型號： | ZXTN25020DFL |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 20V, SOT23, NPN low power transistor |
| 中文描述： | 20V的，SOT23封裝，低功耗晶體管叩 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 418K |
| 代理商： | ZXTN25020DFL |
ZXTN25020DFL
Issue 4 - January 2007
Zetex Semiconductors plc 2007
4
www.zetex.com
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Symbol
BV
CBO
Min.
100
Typ.
125
Max.
Unit
V
Conditions
I
C
= 100 A
BV
CEX
100
120
V
I
C
= 100 A; R
BE
< 1k or
-1V < V
BE
< 0.25V
I
C
= 10mA
(*)
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
BV
CEO
20
35
V
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
BV
ECX
6
8
V
I
E
= 100 A, R
BC
< 1k or
0.25V > V
BC
> -0.25V
I
E
= 100 A,
Emitter-collector breakdown
voltage (base open)
Emitter-base breakdown
voltage
Collector cut-off current
BV
ECO
5
6
V
BV
EBO
7
8.3
V
I
E
= 100 A
I
CBO
<1
50
20
nA
A
V
CB
= 80V
V
CB
= 80V, T
amb
= 100°C
V
CE
= 80V; R
BE
< 1k or
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 20mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 2A, I
B
= 20mA
(*)
I
C
= 4,5A, I
B
= 450mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
Collector-emitter cut-off
current
I
CEX
-
100
nA
Emitter cut-off current
Collector-emitter saturation
voltage
I
EBO
V
CE(SAT)
<1
60
50
70
nA
mV
85
100
mV
140
160
mV
180
225
mV
245
270
mV
Base-emitter saturation
voltage
Base-emitter turn-on voltage V
BE(ON)
V
BE(SAT)
895
1000
mV
825
900
mV
I
C
= 2A, V
CE
= 2V
(*)
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 2A, V
CE
= 2V
(*)
I
C
= 4.5A, V
CE
= 2V
(*)
I
C
= 50mA, V
CE
= 10V
f
= 100MHz
V
CB
= 10V, f
= 1MHz
(*)
V
CC
= 10V. I
C
= 1A,
I
B1
= I
B2
= 10mA.
Static forward current
transfer ratio
h
FE
300
450
900
220
350
80
120
Transition frequency
f
T
215
MHz
Output capacitance
C
OBO
16.5
25
pF
Delay time
Rise time
Storage time
Fall time
t
(d)
t
(r)
t
(s)
t
(f)
67.7
72.2
361
63.9
ns
ns
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZXTN25020DFLTA | 20V, SOT23, NPN low power transistor |
| ZXTN25040DFH | 40V, SOT23, NPN medium power transistor |
| ZXTN25040DFHTA | 40V, SOT23, NPN medium power transistor |
| ZXTN25040DFL | 40V, SOT23, NPN low power transistor |
| ZXTN25040DFLTA | 40V, SOT23, NPN low power transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXTN25020DFLTA | 功能描述:兩極晶體管 - BJT NPN 20V HG Tran. RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZXTN25020DG | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:20V NPN high gain transistor |
| ZXTN25020DGTA | 功能描述:兩極晶體管 - BJT NPN 20V HIGH GAIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZXTN25020DZ | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:20V NPN high gain transistor in SOT89 |
| ZXTN25020DZTA | 功能描述:兩極晶體管 - BJT NPN 20V HIGH GAIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。