參數(shù)資料
型號: ZXTN25040DFH
廠商: Zetex Semiconductor
英文描述: 40V, SOT23, NPN medium power transistor
中文描述: 40V的,SOT23封裝,npn型中等功率晶體管
文件頁數(shù): 4/6頁
文件大?。?/td> 395K
代理商: ZXTN25040DFH
ZXTN25040DFH
Issue 1 - June 2006
Zetex Semiconductors plc 2006
4
www.zetex.com
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Min.
130
Typ.
170
Max.
Unit
V
Conditions
I
C
= 100 A
BV
CBO
BV
CEX
130
170
V
I
C
= 100 A; R
BE
< 1k or
-1V < V
BE
< 0.25V
I
C
= 10mA
(*)
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
BV
CEO
40
63
V
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
BV
EBO
7
8.3
V
I
E
= 100 A
BV
ECX
6
7.4
V
I
E
= 100 A, R
BC
< 1k or
0.25V > V
BC
> -0.25V
I
E
= 100 A,
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current I
CBO
BV
ECO
6
7.4
V
<1
50
20
nA
A
V
CB
= 100V
V
CB
= 100V, T
amb
= 100°C
V
CE
= 100V; R
BE
< 1k
or
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 10mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 4A, I
B
= 400mA
(*)
I
C
= 4A, I
B
= 400mA
(*)
Collector-emitter cut-off
current
I
CEX
-
100
nA
Emitter-base cut-off current
Collector-emitter saturation
voltage
I
EBO
V
CE(sat)
<1
45
50
55
nA
mV
120
210
mV
135
210
mV
140
190
mV
Base-emitter saturation
voltage
Base-emitter turn-on voltage V
BE(on)
V
BE(sat)
960
1050
mV
840
950
mV
I
C
= 4A, V
CE
= 2V
(*)
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 4A, V
CE
= 2V
(*)
I
C
= 10A, V
CE
= 2V
(*)
I
C
= 50mA, V
CE
= 10V
f
= 100MHz
V
CB
= 10V, f
= 1MHz
(*)
V
CC
= 10V,
I
C
= 1A,
I
B1
= I
B2
= 10mA
Static forward current
transfer ratio
h
FE
300
450
900
300
450
30
60
10
Transition frequency
f
T
190
MHz
Output capacitance
C
OBO
11.7
20
pF
Delay time
Rise time
Storage time
Fall time
t
d
t
r
t
s
t
f
64
108
428
130
ns
ns
ns
ns
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