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參數(shù)資料
| 型號(hào)： | μPA821TF |
| 廠商： | NEC Corp. |
| 英文描述： | High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管) |
| 中文描述： | 高Frequecy低噪聲放大器NPN晶體管（高頻低噪聲放大器npn型晶體管） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 80K |
| 代理商： | ΜPA821TF |
The information in this document is subject to change without notice.
SILICON TRANSISTOR
P
PA821TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2
u
2SC4226) THIN-TYPE SMALL MINI MOLD
1997
Document No. P12690EJ1V0DS00 (1st edition)
Date Published July 1997 N
Printed in Japan
PRELIMINARY DATA SHEET
The
P
PA821TF has 2 built-in low-voltage transistors which are
designed for low-noise amplification in the VHF to UHF band.
FEATURES
Low-noise
NF= 1.2 dBTYP.@ f = 1 GHz, V
CE
= 3V, I
C
= 7mA
High gain
IS
21
el
6-pin thin-type small mini mold package adopted
Built-in 2 transistors (2
u
2SC4226)
2
= 9.0 dBTYP. @ f = 1 GHz, V
CE
= 3V, I
C
= 7mA
ORDERING INFORMATION
Part Number
Quantity
Packing Style
P
PA821TF
Loose products
(50 pcs)
P
PA821TF-T1
Taping products
(3 kpcs/reel)
Remark
If you require an evaluation sample, please contact
an NEC Sales Representative (unit sample quantity
is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150 in 1 element
200 in 2 elements
Note
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
e
65 to 150
°C
Note
110 mW must not be exceeded for 1 element.
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
Embossed tape 8 mm wide.
Pin 6 (Q1 Base),
Pin 5 (Q2 Emitter),
Pin 4 (Q2 Base) face to perfora-
tion side of the tape.
PACKAGE DRAWINGS (Unit: mm)
PIN CONFIGURATION (Top View)
B1
Q1
Q2
6
5
4
3
2
1
E2
B2
C1
E1
C2
PIN CONNECTIONS
1. Collector(Q1)
2. Emitter
3. Collector (Q2)
(Q1)
4. Base
5. Emitter (Q2)
6. Base
(Q2)
(Q1)
R
2
1
0
0
0
0
3
2
1
4
5
6
0
2.10±0.1
1.25±0.1
0
0
+
–
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