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參數(shù)資料
| 型號(hào)： | μPG2110TB |
| 廠商： | NEC Corp. |
| 英文描述： | L-Band PA Driver Amplifier(L波段PA驅(qū)動(dòng)器放大器) |
| 中文描述： | L波段功率放大器驅(qū)動(dòng)放大器（長(zhǎng)波段功率放大器驅(qū)動(dòng)器放大器） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 87K |
| 代理商： | ΜPG2110TB |
GaAs INTEGRATED CIRCUIT
μ
PG2106TB,
μ
PG2110TB
L-BAND PA DRIVER AMPLIFIER
Document No. P14318EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
DESCRIPTION
The
μ
PG2106TB and
μ
PG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were
developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with
3.0 V, having the high gain and low distortion. The
μ
PG2106TB is for 800 MHz band application, and the
μ
PG2110TB is for 1.5 GHz band application.
FEATURES
Low operation voltage
f
RF
Low distortion
: V
DD1
= V
DD2
= 3.0 V
: 889 to 960 MHz, 1429 to 1453 MHz@P
out
= +8 dBm
: P
adj1
=
60 dBc TYP. @V
DD
= 3.0 V, P
out
= +8 dBm, V
AGC
= 2.5 V
External input and output matching
: I
DD
= 25 mA TYP. @V
DD
= 3.0 V, P
out
= +8 dBm, V
AGC
= 2.5 V
External input and output matching
Variable gain control function :
G = 40 dB TYP. @V
AGC
= 0.5 to 2.5 V
External input and output matching
6-pin super minimold package
Low operation current
APPLICATION
Digital Cellular : PDC, IS-136 etc.
ORDERING INFORMATION (PLAN)
Part Number
Package
Supplying Form
μ
PG2106TB-E3
μ
PG2110TB-E3
6-pin super minimold
Carrier tape width is 8 mm.
Qty 3 kp/reel.
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
μ
PG2106TB,
μ
PG2110TB)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Supply Voltage
V
DD1
, V
DD2
6.0
V
AGC Control Voltage
V
AGC
6.0
V
Input Power
P
in
8
dBm
Total Power Dissipation
P
tot
140
Note
mW
Operating Ambient Temperature
T
A
30 to +90
°
C
Storage Temperature
T
stg
35 to +150
°
C
Note
Mounted on a 50
×
50
×
1.6 mm double copper clad epoxy glass PWB, T
A
= +85
°
C
Caution
The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PG2111 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 2A I(C) | TO-66 |
| PG2112 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-66 |
| PG2113 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 2A I(C) | TO-66 |
| PG2114 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-66 |
| PG2115 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-66 |
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