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參數(shù)資料
| 型號： | μPG2110TB |
| 廠商： | NEC Corp. |
| 英文描述： | L-Band PA Driver Amplifier(L波段PA驅(qū)動器放大器) |
| 中文描述： | L波段功率放大器驅(qū)動放大器（長波段功率放大器驅(qū)動器放大器） |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 87K |
| 代理商： | ΜPG2110TB |
Preliminary Data Sheet P14318EJ1V0DS00
11
μ
PG2106TB,
μ
PG2110TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Count: 3, Exposure limit: None
Note
IR35-00-3
VPS
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Count: 3, Exposure limit: None
Note
VP15-00-3
Wave Soldering
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Count: 1, Exposure limit: None
Note
WS60-00-1
Partial Heating
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit: None
Note
–
Note
After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
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| PG2112 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-66 |
| PG2113 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 2A I(C) | TO-66 |
| PG2114 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-66 |
| PG2115 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-66 |
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