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參數(shù)資料
| 型號(hào)： | 0783_XP161A11A1PR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | 0783_XP161A11A1PR |
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The XP161A11A1PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.065
(Vgs=10V)
: Rds(on)=0.105
(Vgs=4.5V)
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage
: 4.5V
High density mounting : SOT-89
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.105 (max)
NGate Protect Diode Built-in
NUltra High-Speed Switching
NSOT-89 Package
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
30
±20
4
16
4
2
150
-55~150
V
A
W
C
SYMBOL
RATINGS
UNITS
Ta=25C
When implemented on a ceramic PCB
Note:
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
S
D
Gate
Source
Drain
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