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參數(shù)資料
| 型號(hào)： | 0802YC106KAT |
| 廠商： | TriQuint Semiconductor,Inc. |
| 英文描述： | TV 11C 11#12 SKT PLUG |
| 中文描述： | 9.9 - 11.2Gb / s光調(diào)制器驅(qū)動(dòng) |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 920K |
| 代理商： | 0802YC106KAT |
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TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Datasheet
2
SYMBOL
PARAMETER 6/
VALUE
NOTES
Vd1, Vd2T
POSITIVE SUPPLY VOLTAGE
Drain Voltage
8 V
Id1
Id2T
POSITIVE SUPPLY CURRENT
Drain Current
100 mA
300mA
1/
Pd
POWER DISSIPATION
4 W
2/
Vg1, Vg2
Ig1, Ig2
NEGATIVE GATE
Voltage
Gate Current
0 V to –3 V
5 mA
Vctrl1, Vctrl2
Ictrl1, Ictrl2
CONTROL GATE
Voltage
Gate Current
Vd/2 to –3 V
5 mA
3/
PIN
VIN
RF INPUT
Sinusoidal Continuous Wave Power
10.7Gb/s PRBS Input Voltage Peak to Peak
23 dBm
4 Vpp
TCH
OPERATING CHANNEL TEMPERATURE
150 0C4/ 5/
TSTG
STORAGE TEMPERATURE
-40 to 125 0C
TGA4953EPU
Notes:
1/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating.
2/ When operated at this bias condition with a base plate temperature of 800C, the median life is reduced.
3/ Assure Vctl1 never exceeds Vd1 and assure Vctrl2 never exceeds Vd2 during bias up and down sequences.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings represent the maximum operable values for the device.
MAXIMUM RATINGS
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
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