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參數(shù)資料
| 型號(hào)： | 0802YC106KAT |
| 廠商： | TriQuint Semiconductor,Inc. |
| 英文描述： | TV 11C 11#12 SKT PLUG |
| 中文描述： | 9.9 - 11.2Gb / s光調(diào)制器驅(qū)動(dòng) |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 920K |
| 代理商： | 0802YC106KAT |
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Datasheet
5
Notes:
1/ Verified at package level RF test.
2/ Package RF Test Bias: Vd=5 V, adjust Vg1 to achieve Id=65 mA then adjust Vg2 to achieve
Id=200mA, Vctrl=+0.2 V
3/ Verified by design, SMT assembled onto a demonstration board detailed on sheet 6.
4/ Vin=250mV, Data Rate = 10.7Gb/s, VD1=VD2T or greater, VCTRL2 and VG2 are adjusted for maximum output.
5/ Computed using RSS Method where Jrms_additive = SQRT(Jrms_out2 - Jrms_in2)
6/ Verified at die level on-wafer probe.
7/ Power Bias Die Probe: Vtee=8 V, adjust Vg to achieve Id=175 mA+/-5%, Vctrl=1.5 V
Note: At the die level, drain bias is applied thru the RF output port using a bias tee, voltage
is at the DC input to the bias tee.
TGA4953EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
RF SPECIFICATION
(Continued)
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