參數(shù)資料
型號(hào)： 0910-300M
元件分類： 功率晶體管
英文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： HERMETIC SEALED, 55KT, 2 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 105K
代理商： 0910-300M
0910-300M
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE
AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
GENERAL DESCRIPTION
The 0910-300M is an internally matched, COMMON BASE transistor capable
of providing 300 Watts of pulsed RF output power at 150
s pulse width, , 5%
duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed
transistor is specifically designed for P-Band radar applications. It utilizes gold
metallization and diffused emitter ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
oC
600 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
65 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
20 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200
oC
Operating Junction Temperature
+ 200
oC
ELECTRICAL CHARACTERISTICS @ 25
OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pg
ηηηηc
Rl
Droop
VSWR
1
VSWRs
Power Out
Power Gain
Collector Efficiency
Input Return loss
Load Mismatch Tolerance
Droop
Load Mismatch - Stability
Freq = 890 – 1000 MHz
Vcc = 50 Volts
Pin = 33 Watts
Pulse Width = 150
s
Duty Factor = 5%
300
9.6
40
-9
45
425
0.5
3:1
2:1
Watts
dB
%
dB
Note 1: Pulse condition of 150
sec, 10%.
Bvces
Ices
θθθθjc1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Thermal Resistance
Ic = 80 mA
Vce = 50 Volts
Rated Pulse Condition
65
15
0.29
Volts
mA
oC/W
Issue Nov 2005
0910– 300M
300 Watts - 50 Volts, 150
s, 5%
Radar 890 - 1000 MHz
相關(guān)PDF資料
PDF描述
0910-60M P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1
0912-25 TRANSISTOR | BJT | NPN | 2.5A I(C) | FO-67VAR
0912-45 TRANSISTOR | BJT | NPN | 4.5A I(C) | FO-67VAR
0912-25 DME/TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 25; P(in) (W): 3.5; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55CT-1
0912-25 L BAND, Si, NPN, RF POWER TRANSISTOR
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