參數(shù)資料
型號(hào): 0910-300M
元件分類: 功率晶體管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, 55KT, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 105K
代理商: 0910-300M
0910-300M
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE
AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
Performance Curves
Pin vs. Pout
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
37
38
39
40
41
42
43
44
45
46
47
Pin (dBm)
P
o
u
t(
W
)
890 MHz
937 MHz
1000 MHz
Pin vs. Gain
0
1
2
3
4
5
6
7
8
9
10
11
12
37
38
39
40
41
42
43
44
45
46
47
Pin (dBm)
G
ai
n
(d
B
)
890 MHz
937 MHz
1000 MHz
Pin vs. Efficiency
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
37
38
39
40
41
42
43
44
45
46
47
Pin (dBm)
E
ff
ici
en
cy
(
%
)
890 MHz
937 MHz
1000 MHz
Impedance Information
Output
Matching
Circuit
Input
Matching
Circuit
50 Ohms
ZSource
ZLoad
Frequencies (MHz)
)
(
Source
Z
)
(
Load
Z
2
890
1.828 – j3.921
1.636-j2.494
937
1.895 – j3.67
1.745 – j2.406
1000
2.015 – j3.408
1.911 – j2.387
Note 2:
Load
Z
exclusive of bias circuit
0910– 300M
相關(guān)PDF資料
PDF描述
0910-60M P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1
0912-25 TRANSISTOR | BJT | NPN | 2.5A I(C) | FO-67VAR
0912-45 TRANSISTOR | BJT | NPN | 4.5A I(C) | FO-67VAR
0912-25 DME/TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 25; P(in) (W): 3.5; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55CT-1
0912-25 L BAND, Si, NPN, RF POWER TRANSISTOR
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