
4
FN3076.13
December 21, 2005
Power Gain-Bandwidth Product,
f
MAX
I
C
= 10mA, V
CE
= 5V
-
6
-
-
2.5
-
GHz
Base to Emitter Capacitance
V
BE
= -3V
-
200
-
-
500
-
fF
Collector to Base Capacitance
V
CB
= 3V
-
200
-
-
500
-
fF
Electrical Specifications
T
A
= 25°C
(Continued)
PARAMETER
TEST CONDITIONS
DIE
SOIC, QFN
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
Electrical Specifications
T
A
= 25°C
PARAMETER
TEST CONDITIONS
DIE
SOIC, QFN
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
(BR)CBO
I
C
= -100
μ
A, I
E
= 0
10
15
-
10
15
-
V
Collector to Emitter Breakdown
Voltage, V
(BR)CEO
I
C
= -100
μ
A, I
B
= 0
8
15
-
8
15
-
V
Collector to Emitter Breakdown
Voltage, V
(BR)CES
I
C
= -100
μ
A, Base Shorted to Emitter
10
15
-
10
15
-
V
Emitter to Base Breakdown
Voltage, V
(BR)EBO
I
E
= -10
μ
A, I
C
= 0
4.5
5
-
4.5
5
-
V
Collector Cutoff Current, I
CEO
V
CE
= -6V, I
B
= 0
-
2
100
-
2
100
nA
Collector Cutoff Current, I
CBO
V
CB
= -8V, I
E
= 0
-
0.1
10
-
0.1
10
nA
Collector to Emitter Saturation
Voltage, V
CE(SAT)
I
C
= -10mA, I
B
= -1mA
-
0.3
0.5
-
0.3
0.5
V
Base to Emitter Voltage, V
BE
I
C
= -10mA
-
0.85
0.95
-
0.85
0.95
V
DC Forward-Current Transfer
Ratio, h
FE
I
C
= -10mA, V
CE
= -2V
20
60
-
20
60
-
Early Voltage, V
A
I
C
= -1mA, V
CE
= -3.5V
10
20
-
10
20
-
V
Base to Emitter Voltage Drift
I
C
= -10mA
-
-1.5
-
-
-1.5
-
mV/°C
Collector to Collector Leakage
-
1
-
-
1
-
pA
Electrical Specifications
T
A
= 25°C
PARAMETER
TEST CONDITIONS
DIE
SOIC, QFN
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f = 1.0GHz, V
CE
= -5V,
I
C
= -5mA, Z
S
= 50
-
3.5
-
-
3.5
-
dB
f
T
Current Gain-Bandwidth
Product
I
C
= -1mA, V
CE
= -5V
-
2
-
-
2
-
GHz
I
C
= -10mA, V
CE
= -5V
-
5.5
-
-
5.5
-
GHz
Power Gain-Bandwidth
Product
I
C
= -10mA, V
CE
= -5V
-
3
-
-
2
-
GHz
Base to Emitter Capacitance
V
BE
= 3V
-
200
-
-
500
-
fF
Collector to Base Capacitance
V
CB
= -3V
-
300
-
-
600
-
fF
HFA3046, HFA3096, HFA3127, HFA3128