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參數(shù)資料
| 型號(hào)： | 12F60PBF |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封裝： | DO-4, 1 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 263K |
| 代理商： | 12F60PBF |
12F(R) Series
2
Bulletin I20205 rev. B 01/05
www.irf.com
Voltage
V
RRM, maximum
V
RSM, maximum non-
V
R(BR), minimum
I
RRM max.
Type number
Code
repetitive peak
avalanche
@ T
J = 175°C
reverse voltage
voltage
VV
V
(1)
mA
10
100
150
--
20
200
275
--
40
400
500
12F(R)
60
600
725
750
12
80
800
950
100
1000
1200
1150
120
1200
1400
1350
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
F(AV)
Max. average forward current
12
A
180° conduction, half sine wave
@ Case temperature
144
°C
I
F(RMS)
Max. RMS forward current
19
A
P
R
Maximum non-repetitive
7
K/W
10s square pulse, T
J = TJ max.
peak reverse power
see note (2)
I
FSM
Max. peak, one-cycle forward,
265
t = 10ms
No voltage
non-repetitive surge current
280
t = 8.3ms
reapplied
225
t = 10ms
100% V
RRM
235
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
351
t = 10ms
No voltage
Initial T
J = TJ max.
320
t = 8.3ms
reapplied
250
t = 10ms
100% V
RRM
226
t = 8.3ms
reapplied
I2√t
Maximum I2√t for fusing
3510
A2√s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level value of threshold
voltage
V
F(TO)2 High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.26
V
I
pk= 38A, TJ = 25°C, tp = 400s rectangular wave
Parameter
12F(R)
Units Conditions
6.20
(I > π x I
F(AV)), TJ = TJ max.
10.70
(16.7% x π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
m
0.97
(I > π x I
F(AV)), TJ = TJ max.
0.77
(16.7% x π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
V
A2s
A
Forward Conduction
(2) Available only for Avalanche version, all other parameters the same as 12F.
(1) Avalanche version only available from V
RRM 400V to 1200V.
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