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參數(shù)資料
| 型號(hào)： | 12F60PBF |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封裝： | DO-4, 1 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 263K |
| 代理商： | 12F60PBF |
12F(R) Series
3
Bulletin I20205 rev. B 01/05
www.irf.com
180°
0.33
0.26
T
J = TJ max.
120°
0.41
0.44
90°
0.53
0.58
60°
0.78
0.81
30°
1.28
1.29
Conduction angle
Sinusoidal conduction Rectangular conduction Units
Conditions
K/W
R
thJC Conduction
(The following table shows the increment of thermal resistence R
thJC when devices operate at different conduction angles than DC)
Ordering Information Table
1
23
4
5
Device Code
A
12
F
R
120
M
1
-
A
= Avalanche diode
None = Standard diode
2
-
Current rating: Code = I
F(AV)
3
-
F
= Standard device
4
-
None = Stud Normal Polarity (Cathode to Stud)
R
= Stud Reverse Polarity (Anode to Stud)
5
-
Voltage code: Code x 10 = V
RRM (See Voltage Ratings table)
6
-
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M
= Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)
6
Parameter
12F(R)
Units
Conditions
T
J
Max.junctionoperatingtemperaturerange
-65 to 175
T
stg
Max. storage temperature range
-65 to 200
R
thJC
Max. thermal resistance, junction to case
2
DC operation
R
thCS
Max. thermal resistance, case
Mounting surface, smooth, flat and
to heatsink
greased
T
Allowable mounting torque
1.5 +0-10%
Nm
Not lubricated threads
13
lbf.in
1.2 +0-10%
Nm
Lubricated threads
10
lbf.in
wt
Approximate weight
7 (0.25)
g (oz)
Case style
DO-203AA (DO-4)
See Outline Table
°C
0.5
K/W
Thermal and Mechanical Specifications
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