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參數(shù)資料
| 型號(hào)： | 1N5553US |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 800 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, D-5B, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | 1N5553US |
VOIDLESS HERMITICALLY SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5550US thru 1N5554US
1N5550US
–
1N5554US
DESCRIPTION
APPEARANCE
This “standard recovery” surface mount rectifier diode series is military qualified to
MIL-PRF-19500/420 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 5.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded packages for thru-hole mounting (see separate data
sheet for 1N5550 thru 1N5554).
Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speeds.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount package series equivalent to the
JEDEC registered 1N5550 to 1N5554 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/420
Axial-leaded equivalents also available (see separate
data sheet for 1N5550 thru 1N5554)
Standard recovery 5 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65oC to +200oC
Storage Temperature: -65oC to +175oC
Thermal Resistance: 6.5oC/W junction to endcap
Thermal Impedance: 1.5oC/W @ 10 ms heating time
Average Rectified Forward Current (I
O): 5 Amps @
TEC = 55C (see Note 1)
Forward Surge Current (8.3 ms half sine): 100 Amps
Solder temperatures: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish.
Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING: Cathode band only
POLARITY: Cathode indicated by band
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 539 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
FORWARD VOLTAGE
VF @ 9A (pk)
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
VBR
@50
μA
VOLTS
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
AVERAGE
RECTIFIED
CURRENT
IO1 @
TEC=+55
o
C
Note 1
AMPS
AVERAGE
RECTIFIED
CURRENT
IO2 @
TA=+55
o
C
Note 2
AMPS
MIN.
VOLTS
MAX.
VOLTS
REVERSE
CURRENT
IR @ VRWM
μA
REVERSE
RECOVERY
trr
Note 3
μs
1N5550US
220
200
5
3
0.6V (pk)
1.2V (pk)
1.0
2.0
1N5551US
440
400
5
3
0.6V (pk)
1.2V (pk)
1.0
2.0
1N5552US
660
600
5
3
0.6V (pk)
1.2V (pk)
1.0
2.0
1N5553US
880
800
5
3
0.6V (pk)
1.3V (pk)
1.0
2.0
1N5554US
1100
1000
5
3
0.6V (pk)
1.3V (pk)
1.0
2.0
NOTE 1: Derate linearly at 66.6 mA/C above TEC = 100C. An IO of up to 6 Amps is allowable provided that appropriate heat sinking or
forced air cooling maintains the junction temperature at or below +200C.
NOTE 2: Derate linearly at 25 mA/C above TA = 55C. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficient controlled where TJ(MAX) rating is not exceeded.
Microsemi
Scottsdale Division
Page 1
NOTE 3: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A
Copyright
2009
10-30-2009 REV D, SA7-43
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5553US T/R | 制造商:Microsemi Corporation 功能描述: |
| 1N5553USJANTX/TR | 制造商:Microsemi Corporation 功能描述: |
| 1N5554 | 制造商:Microsemi Corporation 功能描述:Diode Switching 1KV 5A 2-Pin Case E 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 5A 2PIN E - Bulk 制造商:Microsemi 功能描述:Diode Switching 1KV 5A 2-Pin Case E |
| 1N5554/4 | 功能描述:整流器 3.0 Amp 1000 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5554C.TR | 功能描述:DIODE GEN PURP 1KV 5A AXIAL 制造商:semtech corporation 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:1000V 電流 - 平均整流（Io）:5A 不同 If 時(shí)的電壓 - 正向（Vf:1V @ 3A 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時(shí)間（trr）:2μs 不同?Vr 時(shí)的電流 - 反向漏電流:1μA @ 1000V 不同?Vr，F(xiàn) 時(shí)的電容:92pF @ 5V，1MHz 安裝類型:通孔 封裝/外殼:軸向 供應(yīng)商器件封裝:軸向 工作溫度 - 結(jié):- 標(biāo)準(zhǔn)包裝:1 |
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