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參數(shù)資料
| 型號： | 1N5553US |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 800 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, D-5B, 2 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 1N5553US |
VOIDLESS HERMITICALLY SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5550US thru 1N5554US
1N5550US
–
1N5554US
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range excluding all transient voltages (ref JESD282-B).
IO
Average Rectified Output Current: Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and then a specified recovery decay point after a
peak reverse current occurs.
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously
PAD LAYOUT
been identified as “D-5B”
INCHES
mm
A
0.288
7.32
B
0.070
1.78
C
0.155
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
INCHES
mm
MIN
MAX
MIN
MAX
BL
.200
.225
5.08
5.72
BD
.137
.148
3.48
3.76
ECT
.019
.028
0.48
0.711
S
.003
---
0.08
---
Copyright
2009
10-30-2009 REV D, SA7-43
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5553US T/R | 制造商:Microsemi Corporation 功能描述: |
| 1N5553USJANTX/TR | 制造商:Microsemi Corporation 功能描述: |
| 1N5554 | 制造商:Microsemi Corporation 功能描述:Diode Switching 1KV 5A 2-Pin Case E 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 5A 2PIN E - Bulk 制造商:Microsemi 功能描述:Diode Switching 1KV 5A 2-Pin Case E |
| 1N5554/4 | 功能描述:整流器 3.0 Amp 1000 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5554C.TR | 功能描述:DIODE GEN PURP 1KV 5A AXIAL 制造商:semtech corporation 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:1000V 電流 - 平均整流（Io）:5A 不同 If 時的電壓 - 正向（Vf:1V @ 3A 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時間（trr）:2μs 不同?Vr 時的電流 - 反向漏電流:1μA @ 1000V 不同?Vr，F(xiàn) 時的電容:92pF @ 5V，1MHz 安裝類型:通孔 封裝/外殼:軸向 供應(yīng)商器件封裝:軸向 工作溫度 - 結(jié):- 標(biāo)準(zhǔn)包裝:1 |
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