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參數(shù)資料
| 型號(hào)： | 1N5819TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode |
| 中文描述： | Schottky (Diodes & Rectifiers) 1.0 Amp 40 Volt |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 86K |
| 代理商： | 1N5819TR |
1N5818, 1N5819
Bulletin PD-20590 rev. B 11/04
2
www.irf.com
Part number
1N5818
1N5819
V
R
V
RWM
Max.
Working Peak Reverse Voltage (V)
Max.
DC Reverse Voltage (V)
Voltage Ratings
30
40
I
F(AV)
Max. Average Forward Current
* See Fig. 4
1.0
A
50% duty cycle @ T
L
=90 °C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive
225
5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 6
35
10ms Sine or 6ms Rect. pulse
Absolute Maximum Ratings
Parameters
Value
Units
Conditions
Following any rated
load condition and with
rated V
RRM
applied
A
T
J
T
stg
R
thJL
Max. Thermal Resistance Junction
to Lead
wt
Approximate Weight
Max. Junction Temperature Range
Max. Storage Temperature Range
-40 to 150
-40 to 150
°C
°C
80
°C/W DC operation (* See Fig. 4)
(2)
0.33(0.012) g (oz.)
Case Style
DO-204AL(DO-41)
Thermal-Mechanical Specifications
Parameters
Value
Units
Conditions
Parameters
1N5818 1N5819
Units
Conditions
V
FM
Max. Forward Voltage Drop
0.55
0.6
V
@ 1A
* See Fig. 1
(1)
0.71
0.73
V
@ 2A
T
J
= 25 °C
0.875
0.9
V
@ 3A
0.5
0.55
V
@ 1A
0.61
0.63
V
@ 2A
T
J
= 125 °C
0.77
0.79
V
@ 3A
I
RM
Max. Reverse Leakage Current
1.0
mA
T
J
= 25°C
* See Fig. 2
(1)
6.0
mA
T
J
= 100°C
12
mA
T
J
= 125°C
C
T
Max. Junction Capacitance
60
pF
V
R
= 5V
DC
(test signal range 100 to 1Mhz) 25°C
L
S
Typical Series Inductance
8.0
nH
Measured lead to lead 5mm from pack. body
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
(1) Pulse Width < 300μs, Duty Cycle < 2%
10000
V/μs
Electrical Specifications
V
R
= rated V
R
(2) Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
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