參數(shù)資料
型號: 1N914-TAP
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
中文描述: Diodes (General Purpose, Power, Switching) 100 Volt 300mA
文件頁數(shù): 1/3頁
文件大?。?/td> 95K
代理商: 1N914-TAP
1N914
Document Number 85622
Rev. 1.8, 17-Aug-10
Vishay Semiconductors
www.vishay.com
1
94 9367
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Fast Switching Diodes
Features
Fast switching speed
High reliability
High conductance
For general purpose switching applicions
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Mechanical Data
Case:
DO-35
Weight:
approx. 125 mg
Cathode Band Color:
black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Non repetitive peak reverse
voltage
Repetitive peak reverse voltage
Thermal Characteristics
T
amb
= 25 °C unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Part
Ordering code
Type Marking
Remarks
1N914
1N914-TR or 1N914-TAP
1N914
Tape and Reel/Ammopack
Test condition
Symbol
Value
Unit
V
RM
100
V
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
75
V
Working peak reverse voltage
75
V
DC blocking voltage
75
V
RMS Reverse voltage
53
V
Forward continuous current
300
mA
Average rectified current
Half wave rectification with
resistive load and f > 50 MHz
t = 1 s
I
FAV
200
mA
Non repetitive peak forward
surge current
I
FSM
I
FSM
P
tot
1
A
t = 1 μs
4
A
Power dissipation
I = 4 mm, T
L
= 25 °C
500
mW
Test condition
I = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
300
Unit
K/W
Junction temperature
+ 175
°C
Storage temperature range
- 65 to + 175
°C
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