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參數(shù)資料
| 型號(hào)： | 1N5999 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類(lèi)： | 齊納二極管 |
| 英文描述： | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 中文描述： | 9.1 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
| 封裝： | HERMETIC SEALED, GLASS, DO-35, 2 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 228K |
| 代理商： | 1N5999 |
Axial-Leaded 500 mW Zener Diodes
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5985 thru 1N6031-1, e3 DO-35
1N5985
1N6031-1,
e3
*ELECTRICAL CHARACTERISTICS @ 30oC Lead Temperature. Lead Length 3/8”.
Max. Zener Impedance
(Note 1)
Max. Reverse Leakage Current
ZZT @ IZT
OHMS
ZZK @ IZK = 0.25 ma
OHMS
IR
@
VR
μA
Volts
JEDEC
Type
Number
Nominal
Zener
Voltage
VZ @ IZT
Volts
(Note 2)
Test
Current
IZT
mA
B,C,D
Suffix
A, Non-
Suffix
B,C,D
Suffix
A, Non-
Suffix
B,C,D
Suffix
A, Non-
Suffix
B,C,D
Suffix
A, Non-
Suffix
Max. DC
Zener
Current
IZM
(Note 3)
Typical
Temp.
Coeff.
of Zener
Voltage
αVZ
%/
oC
1N5985
1N5986
1N5987
1N5988
2.4
2.7
3.0
3.3
5.0
100
95
110
100
1800
1900
2000
2200
2000
2200
2300
2400
100
75
50
25
100
75
1.0
0.5
208
185
167
152
-0.09
-0.075
-0.07
-0.06
1N5989
1N5990
1N5991
1N5992
3.6
3.9
4.3
4.7
5.0
90
88
70
95
90
2300
2400
2500
2200
2500
15
10
5.0
3.0
50
25
15
10
1.0
1.5
0.5
1.0
139
128
116
106
-0.055
-0.045
-0.01
+0.01
1N5993
1N5994
1N5995
1N5996
5.1
5.6
6.2
6.8
5.0
50
25
10
8.0
88
70
50
25
2050
1800
1300
750
2500
2200
2050
1800
2.0
1.0
5.0
3.0
2.0
3.0
4.0
5.2
1.0
1.5
2.0
3.0
98
89
81
74
+0.025
+0.035
+0.04
+0.044
1N5997
1N5998
1N5999
1N6000
7.5
8.2
9.1
10
5.0
7.0
10
15
10
15
18
22
600
1300
750
600
0.5
0.1
1.0
0.5
6.0
6.5
7.0
8.0
4.0
5.2
6.0
6.5
67
61
55
50
+0.051
+0.055
+0.061
+0.065
1N6001
1N6002
1N6003
1N6004
11
12
13
15
5.0
18
22
25
32
25
32
36
42
600
0.1
8.4
9.1
9.9
11
7.0
8.0
8.4
9.1
45
42
38
33
+0.068
+0.073
+0.075
+0.079
1N6005
1N6006
1N6007
1N6008
16
18
20
22
5.0
36
42
48
55
48
55
62
70
600
0.1
12
14
15
17
9.9
11
12
14
31
28
25
23
+.080
+0.083
+0.085
+0.087
1N6009
1N6010
1N6011
1N6012
24
27
30
33
5.0
62
70
78
88
78
88
95
110
600
700
600
700
800
0.1
18
21
23
25
15
17
18
21
19
17
15
+0.090
+0.091
+0.093
+0.094
1N6013
1N6014
1N6015
1N6016
36
39
43
47
5.0
2.0
95
130
150
170
130
170
180
200
700
800
900
1000
900
1000
1100
1300
0.1
27
30
33
36
23
25
27
30
14
13
12
11
+0.094
+0.095
+0.096
1N6017
1N6018
1N6019
1N6020
51
56
62
68
2.0
180
200
225
240
225
240
265
280
1300
1400
1600
1400
1600
1700
2000
0.1
39
43
47
52
33
36
39
43
9.8
8.9
8.0
7.4
+0.096
+0.097
1N6021
1N6022
1N6023
1N6024
75
82
91
100
2.0
1.0
265
280
300
500
300
350
400
800
1700
2000
2300
2600
2300
2600
3000
4000
0.1
56
62
69
76
47
52
56
62
6.7
6.1
5.5
5.0
+0.098
+0.099
+0.110
1N6025
1N6026
1N6027
1N6028
110
120
130
150
1.0
650
800
950
1250
950
1250
1400
1700
3000
4000
4500
5000
4500
5000
5500
6000
0.1
84
91
99
114
69
76
84
91
4.5
4.2
3.8
3.3
+0.110
1N6029
1N6030
1N6031
160
180
200
1.0
1400
1700
2000
2350
2700
5500
6000
7000
8000
9000
0.1
122
137
152
99
114
122
3.1
2.8
2.5
+0.110
*Indicates JEDEC Registered Data. The type number listed indicates a 20% tolerance. For 10% tolerance, add
suffix A; for 5% tolerance, add suffix B; for 2% tolerance add suffix C; for 1% tolerance, add suffix D.
NOTES:
1.
Zener Impedance is derived from the 1 kHz ac voltage which results when an ac current having an rms value equal to 10% of
dc zener current (IZT or IZK) is superimposed on IZT or IZK. See MicroNote 202 for dynamic impedance variation with other
operating currents.
2.
Voltage Measurements to be performed 20 seconds after application of the dc test current.
3.
The maximum zener current IZM shown is for the nominal voltages. The following formula can be used to determine the worst
case current for any tolerance device:
P
VZM
IZM =
Where VZM is the high end of the voltage tolerance specified and P is the rated power of the device.
Microsemi
Scottsdale Division
Page 2
Copyright
2006
5-09-2006 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5999A | 制造商:Microsemi Corporation 功能描述:ZENER SGL 9.1V 10% 480MW 2PIN DO-35 - Bulk 制造商:Microsemi Corporation 功能描述:DIODE ZENER 9.1V 500MW DO-35 |
| 1N5999B | 功能描述:穩(wěn)壓二極管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1N5999B BK | 功能描述:DIODE ZENER 9.1V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:9.1V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:10 Ohms 不同?Vr 時(shí)的電流 - 反向漏電流:100nA @ 7V 不同 If 時(shí)的電壓 - 正向（Vf:1.5V @ 100mA 工作溫度:-65°C ~ 200°C（TJ） 安裝類(lèi)型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:2,500 |
| 1N5999B R0 | 制造商:SKMI/Taiwan 功能描述:DO-35;ZENER 500MW 9V1 |
| 1N5999B TR | 功能描述:DIODE ZENER 9.1V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:9.1V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:10 Ohms 不同?Vr 時(shí)的電流 - 反向漏電流:100nA @ 7V 不同 If 時(shí)的電壓 - 正向（Vf:1.5V @ 100mA 工作溫度:-65°C ~ 200°C（TJ） 安裝類(lèi)型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:10,000 |
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