參數(shù)資料
型號(hào): 1N6478-E3
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB
封裝: LEAD FREE, PLASTIC PACKAGE-2
文件頁數(shù): 2/4頁
文件大?。?/td> 321K
代理商: 1N6478-E3
www.vishay.com
2
Document Number 88527
06-Sep-05
1N6478 thru 1N6484
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to terminal, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol 1N6478 1N6479
1N6480
1N6481
1N6482 1N6483 1N6484
Unit
Maximum
instantaneous forward
voltage
at 1.0 A
TA = 25 °C
TA = 75 °C
VF
1.1
1.0
V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 125 °C
IR
10
200
A
Typical junction
capacitance
at 4.0 V, 1MHz
CJ
8.0
pF
Parameter
Symbol 1N6478 1N6479
1N6480
1N6481
1N6482 1N6483 1N6484
Unit
Maximum thermal resistance (1) (2)
RθJA
RθJT
50
20
°C/W
Figure 1. Forward Current Derating Curve
0
0.2
0.4
0.6
0.8
0
50
75
25
100
125
150
175
1.0
A
v
erage
F
or
w
ard
C
u
rrent
(A)
60 Hz
Resistive or
Inductive Load
Terminal Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
0
5.0
10
15
20
25
30
TA = 75 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
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