參數(shù)資料
型號： 1N6483-E3
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB
封裝： LEAD FREE, PLASTIC PACKAGE-2
文件頁數(shù)： 1/4頁
文件大?。?/td> 103K
代理商： 1N6483-E3
1N6478 thru 1N6484
Vishay General Semiconductor
Document Number: 88527
Revision: 14-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Glass Passivated Junction Rectifier
FEATURES
Superectifier structure for high reliability
condition
Patented
glass-plastic
encapsulation
technique
Ideal for automated placement
Low forward voltage drop
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Meets MSL level 1, per J-STD-020, LF maximum
peak of 250 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
general
purpose
rectification
of
power
supplies,
inverters,
converters
and
freewheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-213AB, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
IR
10 A
VF
1.1 V
TJ max.
175 °C
Patented*
DO-213AB
*Glass-plastic encapsulation
is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N6478
1N6479
1N6480
1N6481
1N6482
1N6483
1N6484
UNIT
STANDARD RECOVERY TIME DEVICE:
1ST BAND IS WHITE
Polarity color bands (2nd band)
Gray
Red
Orange
Yellow
Green
Blue
Violet
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Maximum full load reverse current, full cycle
average at TA = 75 °C
IR(AV)
100
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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相關代理商/技術參數(shù)
參數(shù)描述
1N6483-E3/1 功能描述:整流器 800 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N6483-E3/26 制造商:Vishay Angstrohm 功能描述:Diode Switching 800V 1A 2-Pin DO-213AB T/R
1N6483-E3/51 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N6483-E3/75 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N6483-E3/76 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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