參數(shù)資料
型號: 1N914-TAP
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
中文描述: Diodes (General Purpose, Power, Switching) 100 Volt 300mA
文件頁數(shù): 2/3頁
文件大?。?/td> 95K
代理商: 1N914-TAP
www.vishay.com
2
Document Number 85622
Rev. 1.8, 17-Aug-10
1N914
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Package Dimensions
in millimeters (inches):
DO-35
Test condition
I
F
= 10 mA
I
R
= 100 μA
V
R
= 75 V
V
R
= 20 V, T
j
= 150 °C
V
R
= 20 V
V
R
= 0, f = 1 MHz
I
F
= 10 mA to I
R
= 1 mA,
V
R
= 6 V, R
L
= 100
Ω
Symbol
V
F
V
(BR)
I
R
I
R
I
R
C
D
Min.
Typ.
Max.
1000
Unit
mV
Breakdown voltage
100
V
Peak reverse current
5
μA
50
μA
25
nA
Diode capacitance
4
pF
Reverse recovery time
t
rr
4
ns
Figure 1. Forward Current vs. Forward Voltage
0
0.4
0.
8
1.2
1.6
0.1
1
10
100
1000
I
w
a
u
r
F
V
F
- For
w
ard
V
oltage (
V
)
2.0
94 9170_1
Scattering Limit
T = 25 °C
1
N
914
Figure 2. Reverse Current vs. Reverse Voltage
1
10
100
1000
I
R
-
v
e
u
r
V
R
- Re
v
erse
V
oltage (
V
)
10
1
100
94 909
8
T
j
= 25 °C
Scattering Limit
94 9366
26 (1.024) min.
3.9 (0.154) max.
26 (1.024) min.
0
Cathode identification
1
1
Re
v
. 6 - Date: 29. Jan
u
ary 2007
Doc
u
ment no.: 6.560-5004.02-4
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