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參數(shù)資料
| 型號(hào)： | 1SV214 |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 15.205 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1E1A, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | 1SV214 |
1SV214
2007-11-01
1
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV214
TV Tuning
High capacitance ratio: C2 V/C25 V = 6.5 (typ.)
Low series resistance: rs = 0.4 (typ.)
Excellent C-V characteristics, and small tracking error.
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Peak reverse voltage
VRM
35 (RL = 10 kΩ)V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
30
V
Reverse current
IR
VR = 28 V
10
nA
Capacitance
C2 V
VR = 2 V, f = 1 MHz
14.16
16.25
pF
Capacitance
C25 V
VR = 25 V, f = 1 MHz
2.11
2.43
pF
Capacitance ratio
C2 V/C25 V
5.90
6.50
7.15
Series resistance
rs
VR = 5 V, f = 470 MHz
0.4
0.55
Ω
Note 1: Units are compounded in one package and are matched to 2.5%.
(min)
C
(min)
C
(max)
C
<= 0.025
(VR = 2~25 V)
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
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