- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371353 > 2000SHORTFORMCAT PDF資料下載
參數(shù)資料
| 型號(hào)： | 2000SHORTFORMCAT |
| 文件頁數(shù)： | 19/24頁 |
| 文件大?。?/td> | 250K |
| 代理商： | 2000SHORTFORMCAT |
19
TO-247
TO-247
RF MOSFETs
RF MOSFETs
R
°C/W
V
Volts
P
Watts
G
APT
Part No.
dB(typ)
Pin Out
50
125
125
21 @ 13.56 MHz
21 @ 13.56 MHz
0.75
0.75
Figure 1
Figure 2
ARF440
ARF441
100
200
200
22 @ 13.56 MHz
22 @ 13.56 MHz
0.75
0.75
Figure 1
Figure 2
ARF442
ARF443
300
300
300
18.7 @ 13.56 MHz
18.7 @ 13.56 MHz
0.60
0.60
Figure 1
Figure 2
ARF444
ARF445
250
250
250
15 @ 40.68 MHz
15 @ 40.68 MHz
0.55
0.55
Figure 1
Figure 2
ARF446
ARF447
150
250
250
15 @ 40.68 MHz
15 @ 40.68 MHz
0.55
0.55
Figure 1
Figure 2
ARF448A
ARF448B
150
150
150
13 @ 81.36 MHz
13 @ 81.36 MHz
0.76
0.76
Figure 1
Figure 2
ARF449A
ARF449B
150
500
13 @ 81.36 MHz
0.26
Figure 3
ARF450
NEW
*TO-247
*Not to Scale
Gate
Gate
Source
Drain
Source
Drain
Figure 1
Figure 2
RF Technology
.... APT RF MOSFETs are optimized
for high power Class C, D and E operation from 1-
100 MHz. The die geometry has been designed for
RF high power efficiency and low gate loss. The RF
MOSFETs are mounted on an isolation substrate to
create a TO-247 common source configuration. The
source is directly connected to the center pin and
heatsink tab; no external insulator is necessary. This
provides maximum thermal efficiency without the
added expense and assembly problems of drain
isolation. Internally, symmetric wire bonding
schemes insure that both pinout versions of each
device are perfect mirror image pairs. This
configuration allows for easy layout of push-pull and
parallel pairs for circuit board symmetry and
separation of input and output sections.
High Voltage Operation
.... Historically, all RF
MOSFETs operated at a maximum of 50V. By
combining high voltage MOSFET technology with
specific RF die geometries, this limitation has been
removed. RF operation at up to 300V is now possible.
Why Higher Voltage
.... Higher operating voltage
means higher load impedances. For 300W of RF
output at 50V, the load is less than 4 ohms. At 125V,
the load impedance is 25 ohms. The higher impedance
allows for fewer transformers and combiners. Parallel
devices can still operate into a reasonable and
convenient load impedance. Increasing the operating
voltage also lowers the current required for any given
power output, reducing the size and weight of other
components.
Lower Cost
....
No insulators required
Maximum thermal efficiency. The internal BeO
insulator is more efficient than external insulators.
Simplified board layout due to symmetric pairs
configuration
Note:
The ARF446 through ARF450 devices are
based on the latest MOS V
RF technology and are
the preferred devices for all new designs. The ARF440
through ARF445 are based on Power MOS IV
technology and are not recommended for new
designs.
Figure 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2001 | BJT |
| 2002ALMHL-AXXX-6 | TRIP AMPLIFIER 24V |
| 2003 | HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS |
| 20068 | and Am29243? EH Controller Data Sheet |
| 2007 | KUPPLUNG DIN STANDARD 7POL GRAU |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2000T | 制造商:DIGITRON 功能描述:THERMOMETER TYPE K 制造商:DIGITRON 功能描述:THERMOMETER, TYPE K |
| 2000-TERMINAL | 制造商:Marathon Special Products 功能描述: |
| 2000WC | 功能描述:電線導(dǎo)管 Wire Clip Plated RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm |
| 2000WFR | 制造商:MAKE-PS 制造商全稱:Make-Ps 功能描述:Single & Dual Output DC/DC Converter |
| 2000-XC6DT2 | 制造商:MTU 制造商全稱:MTU 功能描述:DIESEL ENGINE-GENERATOR SET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。