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| 型號： | 2000SHORTFORMCAT |
| 文件頁數(shù)： | 8/24頁 |
| 文件大?。?/td> | 250K |
| 代理商： | 2000SHORTFORMCAT |
8
Power MOS V
MOSFETs
A new generation of high power, high voltage
Power MOSFETs
.... Based on a patented self aligned
interdigitated open cell structure, this new generation
of MOSFETs offers many advantages over our
previous MOS IV
generation and over industry
standard, closed cell devices.
Lower R
DS(ON)
.... A 25% reduction in on-resistance
is gained by employing shallower junctions and
“overactive area” bonding to increase the channel
packing density per unit of silicon. The packing
density has been optimized to minimize the JFET
resistance and capacitances.
Faster Switching
.... Power MOS V
utilizes a low
resistance aluminum metal gate structure. This allows
for faster gate signal propagation than is possible with
conventional polysilicon gate structures. Power MOS
V
employs shorter gate fingers and a more efficient
gate bus structure than our previous generation to
further reduce the series gate resistance. Multiple
bond pads and wires for both source and gate contacts
have also reduced impedances. The result is
decreased on, rise, delay and fall times. Total
switching time has been reduced by up to 60% over
our previous generation.
Avalanche Energy Rated
.... All Power MOS V
devices are 100% tested and guaranteed for avalanche
energy.
Low Leakage Current
.... Process improvements
have made possible a substantial decrease over our
previous generation. Maximum values for most
products are now specified at 25μA at 25°C and
250μA at 125°C.
Rugged Gate
.... Improvements in gate oxide
processing allow for specification of a high gate
rupture voltage. All Power MOS V
MOSFETs are
specified for ± 30V continuous operation and ± 40V
transient operation.
Lower Cost
.... A less complex fabrication process,
improved manufacturing yields and reduced cycle
times have all contributed to a more cost-effective
device.
Comparison of Lowest R
in TO-247 Package Between New Generation Power MOS V
and Previous Generation Power MOS IV
Breakdown
Voltage (V)
1200
1000
800
600
500
400
300
200
100
New Generation
Power MOS V
R
DS(ON)
(m
W
)
1500
860
560
250
150
120
70
38
19
Previous Generation
Power MOS IV
R
DS(ON)
(m
W
)
---
1000
750
300
200
160
85
45
25
Improvement
New
14%
25%
17%
25%
25%
18%
16%
24%
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