參數資料
型號: 203N
廠商: Fairchild Semiconductor Corporation
英文描述: N-Channel 2.5V Specified PowerTrench BGA MOSFET
中文描述: N溝道2.5V的指定的PowerTrench MOSFET的BGA封裝
文件頁數: 1/6頁
文件大?。?/td> 144K
代理商: 203N
September 2005
2004 Fairchild Semiconductor Corporation
FDZ203N Rev. E6(W)
FDZ203N
N-Channel 2.5V Specified PowerTrench
BGA MOSFET
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ203N minimizes both PCB space
and R
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild’s
advanced
2.5V
specified
Applications
Battery management
Load switch
Battery protection
Features
7.5 A, 20 V.
R
DS(ON)
= 18 m
@ V
GS
= 4.5
R
DS(ON)
= 30 m
@ V
GS
= 2.5 V
Occupies only 4 mm
2
of PCB area.
Less than 40% of the area of a SSOT-6
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Ultra-low Q
g
x R
DS(ON)
figure-of-merit.
High power and current handling capability.
GATE
Bottom
Index
slot
Top
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
7.5
20
1.6
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
67
11
1
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
203N
FDZ203N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
S
D
G
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203P 功能描述:電池座、電池扣和電池接頭 9V ALUM Battery HOLDER RoHS:否 制造商:Eagle Plastic Devices 產品:Battery Snaps 電池組電池大小:9 V 電池數量:1 端接類型:Snaps 顏色:Black 材料:Polyvinyl Chloride (PVC) 安裝風格:Snap-In
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