參數資料
型號: 20ETF12S
英文描述: 1200V Fast Recovery Diode in a D2-Pak package
中文描述: 1200伏的快速恢復二極管的一項D2 - PAK封裝
文件頁數: 3/8頁
文件大小: 126K
代理商: 20ETF12S
3
20ETF..S HV QUIET
IR
Series
I2128 rev. A 01/2000
T
J
T
stg
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient (PCB Mount)**
Max. Junction Temperature Range
- 40 to 150
°
C
Max. Storage Temperature Range
- 40 to 150
°
C
0.9
°
C/W
DC operation
62
°
C/W
T
s
wt
Soldering Temperature
240
°
C
Approximate Weight
2 (0.07)
g (oz.)
Case Style
D
2
Pak (SMD-220)
Thermal-Mechanical Specifications
Parameters
20ETF..S Units
Conditions
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140μm) copper 40
°
C/W
For recommended ootprint and soldering echniques refer o application note #AN-994
100
110
120
130
140
150
0
5
10
15
20
25
30
°
60
°
90
°
120
°
180
°
M
°
C
Conduction Angle
Average Forward Current (A)
20ETF.. Series
R (DC) = 0.9 K/W
100
110
120
130
140
150
0
5
10
15
20
25
30
35
DC
30
°
60
°
90
°
120
°
180
°
M
°
C
Conduction Period
Average Forward Current (A)
20ETF.. Series
R (DC) = 0.9 K/W
0
5
10
15
20
25
30
35
0
5
10
15
20
25
RMS Limit
180
°
120
°
90
°
60
°
30
°
Conduction Angle
Average Forward Current (A)
M
20ETF.. Series
T = 150
°
C
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
35
DC
180
°
120
°
90
°
60
°
30
°
RMS Limit
Conduction Period
Average Forward Current (A)
M
20ETF.. Series
T = 150
°
C
相關PDF資料
PDF描述
20ETF-HV
20ETF-S-HV
20ETF08 FAST SOFT RECOVERY
20ETF10 FAST SOFT RECOVERY
20ETF12 FAST SOFT RECOVERY
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