參數(shù)資料
型號: 20ETF12S
英文描述: 1200V Fast Recovery Diode in a D2-Pak package
中文描述: 1200伏的快速恢復二極管的一項D2 - PAK封裝
文件頁數(shù): 4/8頁
文件大?。?/td> 126K
代理商: 20ETF12S
4
20ETF..S HV QUIET
IR
Series
I2128 rev. A 01/2000
Fig. 8 - Recovery Time Characteristics, T
J
= 25
°
C
Fig. 9 - Recovery Time Characteristics, T
J
= 150
°
C
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
50
100
150
200
250
300
350
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
P
Initial T = 150
°
C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
20ETF.. Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
50
100
150
200
250
300
350
400
0.01
0.1
1
Pulse Train Duration (s)
P
Versus Pulse Train Duration.
Initial T = 150
°
C
No Voltage Reapplied
Rated V Reapplied
20ETF.. Series
Maximum Non Repetitive Surge Current
1
10
100
1000
0
0.5
1
1.5
2
2.5
3
3.5
4
T = 25
°
C
I
Instantaneous Forward Voltage (V)
T = 150
°
C
20ETF.. Series
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
50
100
150
200
Rate Of Fall Of Forward Current - di/dt (A/μs)
1 A
5 A
10 A
I = 30 A
20 A
M
20ETF.. Series
T = 25
°
C
0
0.3
0.6
0.9
1.2
0
50
100
150
200
Rate Of Fall Of Forward Current - di/dt (A/μs)
1 A
5 A
10 A
I = 30 A
20 A
M
20ETF.. Series
T = 150
°
C
相關PDF資料
PDF描述
20ETF-HV
20ETF-S-HV
20ETF08 FAST SOFT RECOVERY
20ETF10 FAST SOFT RECOVERY
20ETF12 FAST SOFT RECOVERY
相關代理商/技術參數(shù)
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