參數(shù)資料
型號(hào): 20MT120UF
廠商: International Rectifier
英文描述: UltraFast NPT IGBT
中文描述: 超快速IGBT的不擴(kuò)散核武器條約
文件頁數(shù): 1/13頁
文件大小: 699K
代理商: 20MT120UF
20MT120UF
UltraFast NPT IGBT
V
CES
= 1200V
I
C
= 40A
T
C
= 25°C
UltraFast Non Punch Through (NPT)
Technology
Positive V
Temperature Coefficient
10μs Short Circuit Capability
HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
Low Diode V
Square RBSOA
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
UL approved (File E78996)
Features
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
V
CES
I
C
Collector-to-Emitter Breakdown Voltage
1200
V
Continuos Collector Current
@ T
C
= 25°C
@ T
C
= 106°C
40
A
20
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
Pulsed Collector Current
Clamped Inductive Load Current
100
100
Diode Continuous Forward Current
Diode Maximum Forward Current
@ T
C
= 106°C
25
100
Gate-to-Emitter Voltage
± 20
V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
P
D
Maximum Power Dissipation (only IGBT)
@ T
C
= 25°C
@ T
C
= 100°C
240
W
96
Parameters
Max
Units
Optimized for Welding, UPS and SMPS
Applications
Rugged with UltraFast Performance
Benchmark Efficiency above 20KHz
Outstanding ZVS and Hard Switching
Operation
Low EMI, requires Less Snubbing
Excellent Current Sharing in Parallel
Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal
Resistance
Benefits
M
MTP
5/
I27124 rev. D 02/03
1
www.irf.com
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